Auteur(s): Cloitre T., Briot O., Gil B., Bertho D., Jancu J.M., Ponga B.E., Boring P., Mathieu H., Jouanin C., Aulombard R.
Conference: 7TH TRIESTE ICTP-IUPAP SEMICONDUCTOR SYMP INT CTR THEORET PHYS (Trieste, IT, 1992)
Actes de conférence: PHYSICA B, vol. 185 p.109 (1993)
Ref HAL: hal-00547289_v1
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Résumé:
We have grown short-period ZnSe-ZnTe superlattices using low-pressure MOVPE. The influence of the growth parameters was investigated in detail. Combination of optical characterization with a tight-binding calculation gives a value of 200 meV for the strain-free valence band offset.