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We present a detailed study of the optical properties of short-period ZnS-ZnSe strained-layer superlattices. These superlattices have been grown by metalorganic vapor-phase epitaxy. We show that the photoluminescence exhibits a low-energy tail due to localization of the exciton to interfacial potential fluctuations. A detailed analysis of the electronic structure has been performed using the envelope-function approach to obtain the valence-band and conduction-band envelope functions and band lineups. This was completed by a self-consistent calculation of the exciton binding energies. In this calculation the marginal conduction-band offset deduced from the standard envelope-function calculation is corrected by the electrostatic deformation produced by the presence of a localized hole wave function.