Auteur(s): Bouchara D., Abounadi A., Diblasio M., Briot N., Cloitre T., Briot O., Gil B., Calas J., Averous M., Aulombard R.
Conference: 6th International Conference on I-VI Compounds and Related Optoelectronic Materials (Newport, RI, US, 1993)
Actes de conférence: JOURNAL OF CRYSTAL GROWTH, vol. 138 p.121 (1994)
Ref HAL: hal-00547278_v1
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Résumé:
We have studied the temperature dependence of the photoluminescence of tellurium-doped ZnS-ZnSe superlattices. By comparing the reflectivity and photoluminescence data, we were able to identify both free exciton recombination and self-trapped exciton band energy split by 90 meV. The behaviour of the photoluminescence with temperature results from trapping versus detrapping effects which are ruled by an activation energy of 80 meV. This behaviour is analysed in the context of a configuration coordinate diagram.