Auteur(s): Cloitre T., Aigouy L., Diblasio M., Gil B., Bigenwald P., Briot N., Briot O., Bouchara D., Averous M., Aulombard R.
Conference: 36th Electronic Materials Conference (EMC) (Boulder, CO, US, 1994)
Actes de conférence: JOURNAL OF ELECTRONIC MATERIALS, vol. 24 p.123 (1995)
Ref HAL: hal-00547268_v1
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Résumé:
We present a detailed examination of the optical properties and electronic structure taken from photoreflectance and photoluminescence data collected on a series of short-period ZnS-ZnSe superlattices grown by low pressure metalorganic vapor phase epitaxy. We studied the band offset problem and calculated the exciton binding energy using several variational models. The temperature dependence of the photoluminescence properties of these superlattices was analyzed in the context of a model which includes the influence of the interfacial disorder.