Auteur(s): Demangeot F., Frandon J., Renucci Ma, Briot O., Gil B., Aulombard R.
(Article) Publié: Solid State Communications, vol. 100 p.207 (1996)
Ref HAL: hal-00547049_v1
Exporter : BibTex | endNote
Résumé:
The effect of the built-in biaxial stress on the E(2) and A(1) (LO) q = 0 phonon modes of wurtzite GaN layers deposited by Metal Organic Vapor Phase Epitaxy on (0001) direction on sapphire substrates is studied by Raman spectroscopy. Shifts in phonon frequencies are measured, which we correlate to the residual strain fields in the epilayers. Using stress calibration measurements taken from reflectance data, the biaxial pressure coefficients of mode frequencies are determined and used to calculate the corresponding deformation potentials.