Auteur(s): Tomasiunas R., Pelant Y., Guennani D., Grun J.B., Levy R., Briot O., Gil B., Aulombard R., Sallese J.M.
(Article) Publié: Solid State Communications, vol. 97 p.187 (1996)
Ref HAL: hal-00547107_v1
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Résumé:
We have studied the stimulated emission of MOVPE-grown quantum wells of Zn0.78Cd0.22Se, sandwiched between two thicker, zinc-richer layers. The gain of these samples has been measured, as a function of temperature, using the variable strip-length method. Its mechanism has been shown to be the radiative recombination of an inhomogeneously broadened exciton system.