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Graded index-separate confinement heterostructures (GRIN-SCH) based on ZnCdSe and ZnSe wide band gap semiconductors have been grown by low pressure MOVPE on (100) GaAs substrates. First, we have paid attention to the growth of thick ZnCdSe layers. A first study is carried out using selenium hydride, dimethyl cadmium and two dimethylzinc adducts as Se, Cd and Zn precursor respectively. This combination leads to intense prereactions and poor layer morphology. To limit this problem we have then used the tetrahydrothiophene:dimethylcadmium adduct. GRIN-SCH structures grown using the two Cd metalorganics are studied using photoluminescence. We have made a detailed study on the influence of the temperature on the carrier trapping and detrapping in the structures.