Auteur(s): Briot O., Gil B., Tchounkeu M., Aulombard R., Demangeot F., Frandon J., Renucci M.
Conference: 38th Electronic Materials Conference (EMC) (SANTA BARBARA (CA), US, 1996-06-26)
Actes de conférence: JOURNAL OF ELECTRONIC MATERIALS, vol. 26 p.294-300 (1997)
Ref HAL: hal-00546209_v1
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Résumé:
We address combined utilization of temperature dependent reflectance, photoluminescence, and Raman spectroscopy measurements to optimize the structural and electronic properties of GaN epilayers deposited on sapphire. Last, we study residual strain fields in such epilayers.