Résumé:

It is now established that low temperature-grown buffer layers are needed to improve the structural and electronic properties of GaN layers grown on sapphire. Using X-ray diffraction, we have studied the dependency on temperature and annealing time of the recrystallization of AIN buffer layers grown by low pressure MOVPE. The Warren-Averbach method applied to the broadening and shape analysis of the (0002) and (0004) X-ray diffraction peaks has allowed us to separate grain size distribution from micro-strain effects. The obtained evolution of the relative frequency distribution of the grain sizes with annealing conditions is correlated with atomic force microscopy experiments (dynamic mode). The angular distribution of the c-axis of the grains is determined From X-ray rocking-curves experiments. X-ray reflectometry experiments and a simulation procedure have given us access to the roughness and the chemical composition or the sapphire-buffer layer interface and to the thickness and the roughness of the AlN grown. (C) 1997 Elsevier Science S.A.