Résumé:

We report here on the study of the theoretical optical properties of Ga based nitrides systems. The dipolar matrix elements and hole effective masses are presented as a function of the reciprocal wavevector fur strained bulk GaN. We compute then the A. B and C exciton binding energies for strained GaN/Al0.2Ga0.8N quantum structures and present the calculated optical density for a 50 Angstrom wide well. (C) 1997 Elsevier Science S.A.