Raman, low temperature photoluminescence and transport investigation of N-implanted 6H-SiC Auteur(s): Thomas P., Contreras S., Juillaguet S., Robert Jean-louis, Camassel J., Gimbert J., Billon T., Jaussaud C.
Conference: 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97) (STOCKHOLM (SWEDEN), FR, 1997-08-31) Ref HAL: hal-00543782_v1 Exporter : BibTex | endNote Résumé: We report a combined investigation of Raman, low temperature photoluminescence (LTPL) and high temperature transport measurements performed on nitrogen implanted p-type epitaxial layers of 6H-SiC. |