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- Raman, low temperature photoluminescence and transport investigation of N-implanted 6H-SiC hal link

Auteur(s): Thomas P., Contreras S., Juillaguet S., Robert Jean-louis, Camassel J., Gimbert J., Billon T., Jaussaud C.

Conference: 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97) (STOCKHOLM (SWEDEN), FR, 1997-08-31)
Actes de conférence: SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, vol. 264-2 p.725-728 (1998)


Ref HAL: hal-00543782_v1
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Résumé:

We report a combined investigation of Raman, low temperature photoluminescence (LTPL) and high temperature transport measurements performed on nitrogen implanted p-type epitaxial layers of 6H-SiC.