Auteur(s): Goldner A., Eckey L., Hoffmann A., Gil B., Briot O.
Conference: 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97) (STOCKHOLM (SWEDEN), SE, 1997-08-31)
Actes de conférence: SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, vol. 264-2 p.1283-1286 (1998)
Ref HAL: hal-00546187_v1
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Résumé:
We report on investigations of the excitonic quantum efficiency in GaN in dependence of different buffer layer thicknesses and residual oxygen content in the crystal. The quantum efficiency of the free excitons rises with increasing buffer layer thickness and decreasing residual oxygen content. The influence of oxygen on the quantum efficiency is stronger than that of the buffer layer thickness. In general, the observed quantum efficiencies are below 20% indicating the strong impact of nonradiative relaxation and recombination processes in the excitonic range.