Comparison of silicon versus III-V semiconductor material choice for terahertz imaging with fast field effect transistors based detectors Auteur(s): Knap W., Lusakowski J.
Conférence invité: 2009 E-MRS Fall Meeting (Warsaw, PL, 2009-09-07) Ref HAL: hal-00812129_v1 Exporter : BibTex | endNote Résumé: Comparison of silicon versus III-V semiconductor material choice for terahertz imaging with fast field effect transistors based detectors |