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- Comparison of silicon versus III-V semiconductor material choice for terahertz imaging with fast field effect transistors based detectors hal link

Auteur(s): Knap W., Lusakowski J.

Conférence invité: 2009 E-MRS Fall Meeting (Warsaw, PL, 2009-09-07)


Ref HAL: hal-00812129_v1
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Résumé:

Comparison of silicon versus III-V semiconductor material choice for terahertz imaging with fast field effect transistors based detectors