Imaging above 1 THz Limit with Si-MOSFET Detectors Auteur(s): Schuster F., Videlier H., Sakowicz M., Teppe F., Coquillat D., Dupont B., Siligaris A., Dussopt L., Giffard B., Knap W.
Conference: 35th International Conference on Infrared, Millimeter and Terahertz Waves (Rome, IT, 2010-09-05) Ref HAL: hal-00636140_v1 Exporter : BibTex | endNote Résumé: We demonstrate that a proper antenna and transistor design can provide high responsivity for Terahertz radiation and imaging capability even above the 1 THz limit with a low-cost 130 nm CMOS technology. This result opens the way to CMOS THz imagers working at high frequencies and therefore exhibiting high a spatial resolution - down to similar to 300 mu m. |