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- Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors hal link

Auteur(s): Diakonova N., El Fatimy A., Meziani Y., Otsuji T., Coquillat D., Knap W., Teppe F., Vandenbrouk S., Madjour K., Theron D., Gaquiere C., Poisson M. A., Delage S.

Conference: 35th International Conference on Infrared, Millimeter and Terahertz Waves (Rome, IT, 2010-09-05)
Actes de conférence: 35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010), vol. p.1 (2010)


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Résumé:

We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.