|Terahertz Detection and Emission by Field Effect Transistors: influence of high magnetic fields and channel geometry |
Conference: 35th International Conference on Infrared, Millimeter and Terahertz Waves (Rome, IT, 2010-09-05)
Ref HAL: hal-00636133_v1
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We review a few recent results concerning the physics and applications of FETs as Terahertz detectors and emitters. Particulary we stress results concerning dependance of THz detection and emission on high/quantizing magnetic fields and the geometry of the FETs channel.