Detection of high power THz radiation by GaAs High Electron Mobility and Si Field Effect Transistors

Auteur(s): Drexler C., Diakonova N., Schafberger M., Karpierz K., Karch J., Videlier H., Meziani Y., Olbrich P., Knap W., Ganichev S.

Conference: 35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) (, IT, 2010-09-05)
Actes de conférence: We report on the observation of photocurrents in GaAs High Electron Mobility and Si Field Effect Tra, vol. p.000288130600404 (2010)

Résumé:

We report on the observation of photocurrents in GaAs High Electron Mobility and Si Field Effect Transistors. We show that illuminating the samples with high power terahertz laser radiation causes electric currents. These currents are driven by plasmonic effects in two dimensional electron gases