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- Silicon versus III-V semiconductor material choice for terahertz imaging with nanometerfield effect transistors based detectors hal link

Auteur(s): Knap W., Coquillat D., Diakonova N., Teppe F.

Conférence invité: 5th Int. Conference on Materials Science and Condensed Matter Physics MSCMP 2010 (, MD, 2010-09-13)


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Résumé:

Silicon versus III-V semiconductor material choice for terahertz imaging with nanometerfield effect transistors based detectors