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- Influence of High Magnetic Field and Gate Length on Terahertz Detection by Field Effect Transistors hal link

Auteur(s): Knap W., Videlier H., Boubanga tombet Stephane, Teppe F., Coquillat D., Diakonova N., Lusakowski J., Karpierz K.

Conférence invité: SET159 Specialists Meeting on Terahertz and Other Electromagnetic Wave Techniques for Defence and Se (Vilnius, LT, 2010-05-03)


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Résumé:

Influence of High Magnetic Field and Gate Length on Terahertz Detection by Field Effect Transistors