Auteur(s): Knap W., Teppe F., Consejo C., Chenaud B., Torres J., Solignac P., Wasilewski Z. R., Zholudev M., Diakonova N., Coquillat D., Buzatu P., El Fatimy A., Schuster F., Videlier H., Sakowicz M., Giffard B., Skotnicki T., Palma F.
Conference: TERAHERTZ PHYSICS, DEVICES, AND SYSTEMS V: ADVANCE APPLICATIONS IN INDUSTRY AND DEFENSE (Orlando, US, 2011-04-25)
Ref HAL: hal-00638519_v1
DOI: 10.1117/12.883661
WoS: 000294901700005
Exporter : BibTex | endNote
Résumé:
In this work we review the most important results concerning the physics and applications of FETs as Terahertz detectors [1]. We present two experiments showing: i) Terahertz detection based on low cost 130 nm silicon technology Field Effect Transistors in the sub-THz range (0.2 THz up to 1.1 THz) and ii) first results on detection by FETs of emission from 3.1 THz Quantum Cascade Lasers.