Ref HAL: hal-00638518_v1
PMID 21503093
DOI: 10.1364/OE.19.007827
WoS: 000290482500081
Exporter : BibTex | endNote
282 Citations
Résumé:

This paper investigates terahertz detectors fabricated in a low-cost 130 nm silicon CMOS technology. We show that the detectors consisting of a nMOS field effect transistor as rectifying element and an integrated bow-tie coupling antenna achieve a record responsivity above 5 kV/W and a noise equivalent power below 10 pW/Hz(0.5) in the important atmospheric window around 300 GHz and at room temperature. We demonstrate furthermore that the same detectors are efficient for imaging in a very wide frequency range from similar to 0.27 THz up to 1.05 THz. These results pave the way towards high sensitivity focal plane arrays in silicon for terahertz imaging. (C) 2011 Optical Society of America