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- Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell doi link

Auteur(s): Popov V. V., Fateev D. V., Otsuji T., Meziani Y. M., Coquillat D., Knap W.

(Article) Publié: Applied Physics Letters, vol. 99 p.243504 (2011)
Texte intégral en Openaccess : arxiv


Ref HAL: hal-00704347_v1
DOI: 10.1063/1.3670321
WoS: 000298254200064
Exporter : BibTex | endNote
119 Citations
Résumé:

Plasmonic terahertz detection by a double-grating gate field-effect transistor structure with an asymmetric unit cell is studied theoretically. Detection responsivity exceeding 8 kV/W at room temperature in the photovoltaic response mode is predicted for strong asymmetry of the structure unit cell. This value of the responsivity is an order of magnitude greater than reported previously for the other types of uncooled plasmonic terahertz detectors. Such enormous responsivity can be obtained without using any supplementary antenna elements because the double-grating gate acts as an aerial matched antenna that effectively couples the incoming terahertz radiation to plasma oscillations in the structure channel. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3670321]