- Device loading effect on nonresonant detection of terahertz radiation in dual grating gate plasmon-resonant structure using InGaP/InGaAs/GaAs material systems

Auteur(s): El moutaouakil Amine, Suemitsu Tetsuya, Otsuji Taiichi, Videlier H., Boubanga-tombet Stephane-albon, Coquillat D., Knap W.

Conference: 37th International Symposium on Compound Semiconductors (ISCS) ((JAPAN), FR, 2010-05-31)
Actes de conférence: PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, vol. 8 p.346 (2011)


We report on nonresonant detection of terahertz radiation using our original InGaP/InGaAs/GaAs plasmonresonant high-electron-mobility transistor having a dual grating gate (DGG) structure. The experiments were performed at room temperature using a Gunn diode operating at 0.30 THz as the THz source. Using a deviceloading model, the intrinsic responsivity was extracted and was dependent on the polarization of the incident THz wave. The device exhibited highest response when the electric-field vector of the incident THz radiation was directed in the source-drain direction. The 2D spatial distribution image of the transistor responsivity shows a clear beam focus centred on the transistor position, which proves the appropriate coupling of the THz radiation to the device, due to the DGG structure. The device also showed a high intrinsic responsivity of similar to 90 V/W and a noise equivalent power (NEP) as low as similar to 10-10 WHz(-0.5). (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim