Auteur(s): Videlier H., Diakonova N., Teppe F., Consejo C., Chenaud B., Knap W., Lusakowski J., Tomaszewski D., Marczewski J., Grabiec P.
Conference: 40th "Jaszowiec" International School and Conference on the Physics of Semiconductors (Krynica-Zdrój, PL, 2011-06-25)
Actes de conférence: Acta Physica Polonica A, vol. 120 p.927-929 (2011)
Texte intégral en Openaccess : 
Ref HAL: hal-01922878_v1
DOI: 10.12693/APhysPolA.120.927
WoS: 000297714400032
Exporter : BibTex | endNote
Résumé:
We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation