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- Terahertz Imaging with InP High-electron-mobility Transistors doi link

Auteur(s): Watanabe Takayuki, Akagawa Keisuke, Tanimoto Yudai, Coquillat D., Knap W., Otsuji Taiichi

Conference: TERAHERTZ PHYSICS, DEVICES, AND SYSTEMS V: ADVANCE APPLICATIONS IN INDUSTRY AND DEFENSE (, US, 2011-04-25)
Actes de conférence: Proceedings of SPIE, vol. 8023 p.80230P (2011)


Ref HAL: hal-00814213_v1
DOI: 10.1117/12.887952
WoS: 000294901700021
Exporter : BibTex | endNote
Résumé:

In this work, the performance of InP-based HEMTs as a THz detector was experimentally studied. The nature of the THz rectification by the two-dimensional plasmons in which the DC drain current variation Delta I-d becomes maximal around the threshold voltage was observed. Based on the imaging measurement, it was confirmed that our HEMTs device can work for sensitive THz imaging at 0.3 THz. The directivity of the detector was characterized with the maximum responsivity of 26.1 V/W at theta = 160 degrees.