Auteur(s): Barbagini Francesca, Bengoechea-Encabo Ana, Albert Steven, Lefebvre P., Martinez Javier, Sanchez-Garcia M.A., Calleja E.
Conference: 37th International Conference on Micro and Nano Engineering (MNE 2011). (Berlin, DE, 2011-09-19)
Actes de conférence: Micro- and Nano-Engineering (MNE) 2011 selected contributions: Part II., vol. 98 p.374 (2012)
Texte intégral en Openaccess : 
Ref HAL: hal-00726087_v1
DOI: 10.1016/j.mee.2012.07.024
WoS: 000309497200083
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Résumé:
E-beam lithography was used to pattern a titanium mask on a GaN substrate with ordered arrays of nanoholes. This patterned mask served as a template for the subsequent ordered growth of GaN/InGaN nanorods by plasma-assisted molecular beam epitaxy. The mask patterning process was optimized for several holes configurations. The smallest holes were 30 nm in diameter with a pitch (center-to-center distance) of 100 nm only. High quality masks of several geometries were obtained that could be used to grow ordered GaN/InGaN nanorods with full selectivity (growth localized inside the nanoholes only) over areas of hundreds of microns. Although some parasitic InGaN growth occurred between the nanorods during the In incorporation, transmission electron microscopy and photoluminescence measurements demonstrated that these ordered nanorods exhibit high crystal quality and reproducible optical properties.