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- Helicity sensitive terahertz radiation detection by field effect transistors doi link

Auteur(s): Drexler C., Diakonova N., Olbrich P., Karch J., Schafberger M., Karpierz K., Mityagin Yu, Lifshits M., Teppe F., Klimenko O., Meziani Y. M., Knap W., Ganichev S. D.

(Article) Publié: Journal Of Applied Physics, vol. 111 p.124504 (2012)
Texte intégral en Openaccess : arxiv


Ref HAL: hal-00748688_v1
DOI: 10.1063/1.4729043
WoS: 000305832100142
Exporter : BibTex | endNote
54 Citations
Résumé:

Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one. Also, linear polarization sensitive photoresponse was registered by the same transistors. The results provide the basis for a new sensitive, all-electric, room-temperature, and fast (better than 1 ns) characterisation of all polarization parameters (Stokes parameters) of terahertz radiation. It paves the way towards terahertz ellipsometry and polarization sensitive imaging based on plasma effects in field-effect-transistors.