Ref HAL: hal-00809766_v1
DOI: 10.12693/APhysPolA.122.1080
WoS: WOS:000312229400032
Exporter : BibTex | endNote
Résumé:

Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.