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- Terahertz Rectification by Graphene Field Effect Transistors doi link

Auteur(s): Coquillat D., Diakonova N., Goiran Michel, Vitiello M. S., Vicarelli L., Poumirol Jean-Marie, Escoffier Walter, Raquet Bertrand, But D., Teppe F., Pellegrini V., Tredicucci A., Knap W.

Conference: 2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) (Wollongong, NSW, AU, 2012-09-23)
Actes de conférence: International Conference on Infrared Millimeter and Terahertz Waves, vol. p.1 (2012)


Ref HAL: hal-00816693_v1
DOI: 10.1109/IRMMW-THz.2012.6380119
Exporter : BibTex | endNote
Résumé:

We demonstrate two different THz rectification mechanisms by graphene field effect transistors: a mesoscopic rectification due to the existence of 2nd-order conductance fluctuations and a rectification mechanism where THz radiation modulates simultaneously carrier velocity and carrier density.