|Polarization and Frequency studies of Si MOSFET Terahertz Detectors |
Conference: 2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) (Wollongong, NSW, AU, 2012-09-23)
Ref HAL: hal-00816705_v1
Exporter : BibTex | endNote
Test chips with Si MOSFETs integrating bow tie antennas are investigated to check the polarization and frequency dependence of THz sensitivity. The azimuthal angle corresponding to the maximum sensitivity changes with the pixel position on the chip. This means that the surrounding pixels affect the bow tie radiation pattern and possibly contribute to the antenna coupling. The frequency dependence suggests the presence of surface modes phenomena in the silicon substrate.