- Terahertz Imaging Using Strained-Si MODFETs as Sensors doi link

Auteur(s): Meziani Y.M, Garcia-Garcia E, Velazquez-Perez J, Coquillat D., Diakonova N., Knap W., Grigelionis I, Fobelets K

Conference: International Conference on Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 (Berkeley, CA, US, 2012-06-04)
Actes de conférence: Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International, vol. p.1 (2012)

Ref HAL: hal-00816948_v1
DOI: 10.1109/ISTDM.2012.6222464
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Development of new terahertz (THz) sensors is increasing in interest due to their potential for THz imaging and spectroscopy. One alternative to develop direct THz sensors is based in the oscillation of the plasma waves in the channel of sub-micron FETs.The n-channel Si/SiGe MODFETs used in this study were grown by MBE on a thick relaxed SiGe virtual substrate grown by low-energy PECVD on plain Si wafers.