|Temperature Dependence of Terahertz Radiation Detection by Field Effect Transistors |
Conference: 2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) (Wollongong, NSW, AU, 2012-09-23)
Ref HAL: hal-00816972_v1
Exporter : BibTex | endNote
We have measured the Terahertz photoresponse of three types of FETs as a function of the temperature, to study the change of the dominant current mechanism. For all of them we have compared the photoresponse with its DC transfer characteristics, which is directly proportional to the conductivity.