- Terahertz Detectors Based on Silicon Technology Field Effect Transistors doi link

Auteur(s): Knap W., Schuster F., Coquillat D., Teppe F., Giffard B., But D., Golenkov O., Sizov F.

Conference: 2012 MRS Spring Meeting - Symposium L - Group IV Photonics for Sensing and Imaging (San Francisco, US, 2012-04-09)
Actes de conférence: MRS Proceedings, vol. 1437 p.l07-04 (2012)

Ref HAL: hal-00903719_v1
DOI: 10.1557/opl.2012.1187
Exporter : BibTex | endNote

The concept of THz detection based on excitation of plasma waves in two-dimensional electron gas in Si FETs is one of the most attractive ones, as it makes possible the development of the large-scale integrated devices based on a conventional microelectronic technology including on-chip antennas and readout devices integration. In this work we report on investigations of Terahertz detectors based on low-cost silicon technology field effect transistors. We show that detectors, consisting of a coupling antenna and a n-MOS field effect transistor as rectifying element, are efficient for THz detection and imaging. We demonstrate that in the atmospheric window around 300 GHz, these detectors can achieve a record noise equivalent power below 10 pW/Hz0.5 and a responsivity above 90 kV/W once integrated with on-chip amplifier. We show also that they can be used in a very wide frequency range: from ∼0.2 THz up to 1.1 THz. THz detection by Si FETs pave the way towards high sensitivity silicon technology based focal plane arrays for THz imaging