Résumé:

There is in the industry an increasing need for high power / high temperature electronic devices, as well as industrial sensors, able to probe the environment under severe experimental conditions. Choices of appropriate material and technology depend first of the targeted application and second of the reproducibility of the structures and the availability of mass production from the industrial founders. Such considerations explain why material like Si and GaAs are outstanding materials for sensor development in classical temperature range. Nevertheless, for the applications in harsh conditions and/or above 125°C, other materials must be taken into consideration. There is an agreement that Silicon On Insulator (SOI) layers improve intrinsic measurements limits of standard 3D Si layers (up to about 250-300°C). There is also an agreement that wide band gap semiconductor compounds will make possible the development of applications in higher temperature range (above 500°C) when more conventional materials reach their limits. In the last years the SiC and III-V nitride semiconductor technology made tremendous progress: large diameter substrates and wide range of doping are now available. In this presentation, we will focus on new magnetic sensors interesting for harsh environment applications (high pressure and/or high temperature range) with the objective of industrial feasibility which imply an industrial supply.