Auteur(s): Juillaguet S., Kwasnicki P., Peyre H., Konczewicz L., Contreras S., Zielinski Marcin, Camassel J.
Conference: ECSCRM 2012 (Saint-Petersburg, RU, 2012-09-02)
Actes de conférence: Silicon Carbide and Related Materials 2012, vol. 740-742 p.357-360 (2013)
Ref HAL: hal-00803766_v1
DOI: 10.4028/www.scientific.net/MSF.740-742.357
WoS: 000319785500083
Exporter : BibTex | endNote
2 Citations
Résumé:
Raman scattering spectra have been collected on p-type 4H-SiC samples doped with aluminum up to 5×10^19 atoms per cubic cm. The distortion and asymmetry of FTA modes which appear in the low frequency range has been probed in great details. We show that, using standard Fano formulae with three parameters per mode, one can successively fit all FTA modes profiles in the concentration range 2×10^16 - 5×10^19 Al.cm-3