Nanometer size field effect transistors for terahertz detectors Auteur(s): Knap W., Rumyantsev S., Vitiello M. S., Coquillat D., Blin Stéphane, Diakonova N., Shur M., Teppe F., Tredicucci A., Nagatsuma T. (Article) Publié: Nanotechnology, vol. 24 p.214002 (2013) Ref HAL: hal-00843001_v1 PMID 23618776 DOI: 10.1088/0957-4484/24/21/214002 WoS: 000318223300003 Exporter : BibTex | endNote 85 Citations Résumé: Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-off frequency. This work is an overview of some recent results concerning the application of nanometer scale field effect transistors for the detection of terahertz radiation. |