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- Nanometer size field effect transistors for terahertz detectors doi link

Auteur(s): Knap W., Rumyantsev S., Vitiello M. S., Coquillat D., BLIN Stéphane, Diakonova N., Shur M., Teppe F., Tredicucci A., Nagatsuma T.

(Article) Publié: Nanotechnology, vol. 24 p.214002 (2013)


Ref HAL: hal-00843001_v1
PMID 23618776
DOI: 10.1088/0957-4484/24/21/214002
WoS: 000318223300003
Exporter : BibTex | endNote
79 Citations
Résumé:

Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-off frequency. This work is an overview of some recent results concerning the application of nanometer scale field effect transistors for the detection of terahertz radiation.