- Terahertz imaging using strained-Si MODFETs as sensors doi link

Auteur(s): Meziani Y. M., Garcia-Garcia E., Velazquez-Perez J. E., Coquillat D., Diakonova N., Knap W., Grigelionis I., Fobelets K.

(Article) Publié: Solid-State Electronics, vol. 83 p.113-117 (2013)

Ref HAL: hal-00903630_v1
DOI: 10.1016/j.sse.2013.01.030
WoS: 000318464500021
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We report on non-resonant (broadband) and resonant detection of terahertz radiation using strained-Si modulation doped field effect transistors. The devices were excited at room temperature by two types of terahertz sources (an electronic source based on frequency multipliers at 0.292 THz and a pulsed parametric laser at 1.5 THz). In both cases, a non-resonant response with maxima around the threshold voltage was observed. Shubnikov-de Haas and photoresponse measurements were performed simultaneously and showed a phase-shift of pi/2 in good agreement with the theory, which demonstrates that the observed response is related to the plasma waves oscillation in the channel. The non-resonant features were used to demonstrate the capabilities of such devices in terahertz imaging. We also cooled our device down to 4.2 K to increase the quality factor and resonant detection was observed by using a tunable source of terahertz radiation.