Electron spin dephasing in Mn-based II-VI diluted magnetic semiconductors Auteur(s): Ben Cheikh Z., Cronenberger S., Vladimirova M., Scalbert D., Perez Florent, Wojtowicz Tomasz (Article) Publié: -Physical Review B Condensed Matter And Materials Physics (1998-2015), vol. 88 p.201306(R) (2013) Ref HAL: hal-00911541_v1 DOI: 10.1103/PhysRevB.88.201306 WoS: 000327934900001 Exporter : BibTex | endNote 18 Citations Résumé: In various manganese-based II-VI dilutedmagnetic semiconductors and their quantum structures, the measured variations of electron spin dephasing time in an external magnetic field are conflicting with the most advanced spin relaxation theory based on quantum kinetic equations. We demonstrate, by time-resolved optical spin beat measurements performed on high-mobility n-doped CdMnTe quantum wells, that these contradictions are resolved if one takes into account the electron spin dephasing induced by laser heating of the manganese spins.We then provide a test of the spin relaxation theory inMn-based quantum wells by a careful comparison with existing data, including our measurements. It turns out that the theory systematically underestimates the relaxation rates by a factor of 5. |