Ref HAL: hal-00918350_v1
DOI: 10.1063/1.4826644
WoS: 000326455100069
Exporter : BibTex | endNote
18 Citations
Résumé:

The low frequency 1/f noise in graphene devices was studied in a transverse magnetic field of up to B = 14 T at temperatures T = 80 K and T = 285 K. The examined devices revealed a large physical magnetoresistance typical for graphene. At low magnetic fields (B < 2 T), the level of 1/f noise decreases with the magnetic field at both temperatures. The details of the 1/f noise response to the magnetic field depend on the gate voltage. However, in the high magnetic fields (B > 2 T), a strong increase of the noise level was observed for all gate biases.