|Nanotransistor based THz plasma detectors: low temperatures, graphene, linearity, and circular polarization studies |
Conférence invité: SPIE Optical Engineering + Applications, (San Diego, US, 2013)
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Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-of frequency. This work is an overview of some recent results concerning the low temperatures operation, linearity, and circular polarization studies of nanometer scale field effect transistors for the detection of terahertz radiation. Also first results on graphene transistors are discussed. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.