|Field effect transistor as detector of THz radiation helicity |
Conference: TERAHERTZ EMITTERS, RECEIVERS, AND APPLICATIONS IV (San-Diego, US, 2013-08-25)
Ref HAL: hal-00954531_v1
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We use two antenna model to develop a theory of the recently observed helicity-sensitive detection of terahertz radiation by FETs. The effect is due to the mixing of the ac signals produced in the channel by the two antennas. We obtain the helicity-dependent part of the photoresponse and its dependence on the antenna impedance, gate length, and gate voltage. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.