|Asymmetric Dual-Grating Gate InGaAs/InAlAs/InP HEMTs for Ultrafast and Ultrahigh Sensitive Terahertz Detection |
Conference: 25th International Conference on Indium Phosphide and Related Materials (IPRM) (Kobe, JP, 2013-05-19)
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This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/root Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions.