Auteur(s): Rosales D., Gil B., Bretagnon T., Zhang Fan, Okur Serdal, Monaravian Mortezza, Nizioumskaia Natalya, Avrutin Vitaly, Ozgur Umit, Morkoc Hadis, Leach Jakob
Conference: SPIE PHOTONIC WEST (sann francisco, US, 2014-02-02)
Actes de conférence: Proceedings of Conference on Gallium Nitride Materials and Devices IX SPIE PHOTONIC WEST, vol. Proceedings of SPIE , 8986, p.Proceedings of SPIE , 8986, Article Number: 89860L (2014)
Ref HAL: hal-01021314_v1
DOI: 10.1117/12.2036984
WoS: 000336047500008
Exporter : BibTex | endNote
2 Citations
Résumé:
The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells grown on m-plane oriented substrate are studied in 8K–300K temperature range. The optical spectra reveal strong in-plane optical anisotropies as predicted by group theory. Polarized time resolved temperature-dependent photoluminescence experiments are performed providing access to the relative contributions of the non-radiative and radiative recombination processes. We deduce the variation of the radiative decay time with temperature in the two polarizations. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.