- Temperature, Back Gate and Polarization Studies in Nanotransistor based THz plasma detectors doi link

Auteur(s): Knap W., But D., Bawedin M., Chang S., Klimenko O., Diakonova N., Coquillat D., El Fatimy A., Teppe F., Gutin A., Nagatsuma T., Cristoloveanu S.

Conférence invité: 21st International Conference on Applied Electromagnetics and Communications ICECom (Dubrovnik, HR, 2013-10-14)

Ref HAL: hal-00955621_v1
DOI: 10.1109/ICECom.2013.6684747
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Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-of frequency. This work is an overview of some recent results concerning the THz detection by Si MOS transistors with back-gate, low temperatures operation, and circular polarization studies of nanometer scale field effect transistors for the detection of terahertz radiation. Also first results on graphene transistors are discussed.