|Temperature, Back Gate and Polarization Studies in Nanotransistor based THz plasma detectors |
Conférence invité: 21st International Conference on Applied Electromagnetics and Communications ICECom (Dubrovnik, HR, 2013-10-14)
Ref HAL: hal-00955621_v1
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Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-of frequency. This work is an overview of some recent results concerning the THz detection by Si MOS transistors with back-gate, low temperatures operation, and circular polarization studies of nanometer scale field effect transistors for the detection of terahertz radiation. Also first results on graphene transistors are discussed.