- Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection

Auteur(s): Watanabe Takayuki, Kurita Y., Boubanga tombet S., Suemitsu T., Otsuji T., Coquillat D., Knap W., Fateev D. v., Popov V. v., Minamide H., Ito H., Meziani Y. m.

Conference: 6th Global Symposium on Millimeter-Waves, (Sendai, JP, 2013-04-22)
Actes de conférence: Proceedings 6th Global Symposium on Millimeter-Waves,, vol. p.55 (2013)


We report on room-temperature plasmonic detection of sub-terahertz radiation by InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric dual-grating-gate structure. Maximum normalized responsivities of 22.7 kV/W at 200 GHz and 21.5 kV/W at 292 GHz were achieved under unbiased drain-to-source condition.