Ref HAL: hal-00954505_v1
DOI: 10.1117/1.OE.53.3.031206
WoS: 000329571000005
Exporter : BibTex | endNote
31 Citations
Résumé:

The recent advances in emission and detection of terahertz radiation using two-dimensional (2-D) plasmons in semiconductor nanoheterostructures for nondestructive evaluations are reviewed. The 2-D plasmon resonance is introduced as the operation principle for broadband emission and detection of terahertz radiation. The device structure is based on a high-electron-mobility transistor and incorporates the authors' original asymmetrically interdigitated dual-grating gates. Excellent THz emission and detection performances are experimentally demonstrated by using InAlAs/InGaAs/InP and/or InGaP/InGaAs/GaAs heterostructure material systems. Their applications to nondestructive material evaluation based on THz imaging are also presented.