- Terahertz photodetectors based on tapered semiconductor nanowires doi link

Auteur(s): Romeo L., Coquillat D., Husanu E., Ercolani D., Tredicucci A., Beltram F., Sorba L., Knap W., Vitiello M.

(Article) Publié: Applied Physics Letters, vol. p.231112 (2014)

Ref HAL: hal-01101034_v1
DOI: 10.1063/1.4903473
WoS: 000346266000012
Exporter : BibTex | endNote
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We report on the demonstration of Terahertz (THz) broadband detectors based on field effect transistors exploiting tapered semiconductor nanowires. The intrinsic asymmetry provided by the nanowires geometry allows to achieve responsivity values as high as 55 V/W (2.5 mA/W) and a noise-equivalent-power of 3 × 10−10 W/Hz1/2 independent of the specific gate voltage applied. The possibility to reduce the number of terminals required to the source and drain contacts only and the technological feasibility of multi-pixel arrays are promising for the realization of compact and integrated THz matrix array detection systems.