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- Detection of high intensity THz radiation by field effect transistors hal link

Auteur(s): But D., Sakhno Mikola v., Oden Jonathan, Notake T., Dyakonova Nina v., Coquillat D., Teppe F., Minamide Hiroaki, Otani Chiko, Knap W.

Conference: 26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (Montpellier, FR, 2014)
Actes de conférence: International Conference on Indium Phosphide and Related Materials, vol. p.1 (2014)


Ref HAL: hal-01126627_v1
WoS: WOS:000346124000027
Exporter : BibTex | endNote
Résumé:

Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm2 was studied InGaAs high electron mobility transistors. The observed signal saturation behavior is explained by analogy with current saturation in standard direct currents output characteristics. The theoretical model of terahertz field effect transistor photoresponse was developed shows a good description match with experimental data. Our experimental results show that dynamic range of field effect transistors based terahertz detectors is very high and can extend from mW/cm2 up to kW/cm2.