AlGaN/GaN HEMT's photoresponse to high intensity THz radiation Auteur(s): Diakonova N., But D., Coquillat D., Knap W., Drexler C., Olbrich P., Karch J., Schafberger M., Ganichev S. D., Ducournau Guillaume, Gaquière Christophe, Poisson M. -A., Delage S., Cywinski G., Skierbiszewski C. (Article) Publié: Opto-Electronics Review, vol. 23 p.195-199 (2015) Ref HAL: hal-01190762_v1 DOI: 10.1515/oere-2015-0026 WoS: 000358354800002 Exporter : BibTex | endNote 7 Citations Résumé: We report on the photoresponse dependence on the terahertz radiation intensity in ALGaN/GaN HEMTs. We show that the ALGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm2. The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose. |